WG50N65DHWQ IGBT Trench Field Stop 650 V 91 A 278 W Through Hole TO-247-3
WeEn Semiconductors WG50N65DHWQ IGBT
WeEn Semiconductors WG50N65DHWQ IGBT is a high-speed 650V/50A IGBT with an anti-parallel diode in a TO247 package. This IGBT offers high-speed with low switching losses and features smooth switching behavior that avoids voltage overshoot and reduces system EMI. The WG50N65DHWQ IGBT features trench gate field-stop technology and offers low thermal resistance. This IGBT comes in a halogen-free package, features a Pb-free lead finish, and is RoHS compliant. Typical applications include power factor correction, welding converter, solar inverter. industrial inverter, and UPS. FEATURES
- High-speed with low switching losses
- Fast and soft recovery anti-parallel diode
- Positive VCE(sat) temperature coefficient
- Fast and soft recovery anti-parallel diode
- Qualified according to JEDEC and meets UL94V0 flammability requirement
- Smooth switching behavior avoids voltage overshoot and reduces system EMI
- Halogen-free package and Pb-free lead finish
- RoHS compliant
- Low thermal resistance
- Low VCE(sat) and low switching losses
- Trench gate field-stop technology
SPECIFICATIONS
- -55°C to 150°C operating junction temperature range
- 650V Collector-Emitter Voltage VCE
- 50A DC collector current IC
APPLICATIONS
- Power factor correction
- Welding converter
- Solar inverter
